|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2N5830 Discrete POWER & Signal Technologies 2N5830 C BE TO-92 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 100 120 5.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5830 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 2N5830 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, I B = 0 IC = 100 A, I E = 0 IE = 10 A, I C = 0 VCB = 100 V, I E = 0 VCB = 100 V, I E = 0, TA = 100 C VEB = 4.0 V, IC = 0 100 120 5.0 50 25 50 V V V nA A nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 1.0 mA VCE = 5.0 V, IC = 10 mA VCE = 5.0 V, IC = 50 mA IC = 1.0 mA, I B = 0.1 mA IC = 10 mA, I B = 1.0 mA IC = 50 mA, I B = 5.0 mA IC = 1.0 mA, I B = 0.1 mA IC = 10 mA, I B = 1.0 mA IC = 50 mA, I B = 5.0 mA VCE = 5.0 V, IC = 1.0 mA 60 80 80 500 0.15 0.2 0.25 0.8 1.0 1.0 0.8 V V V V V V V VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Ccb hfe hie hoe hfe Output Capacitance Small-Signal Current Gain Input Impedance Output Admittance Small-Signal Current Gain VCB = 10 V, f = 1.0 MHz IC = 10 mA, VCE = 10 V, f = 100 MHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 60 1.0 4.0 5.0 6.0 40 K mho pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
Price & Availability of 2N5830 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |